Technical University Berlin, MAT, Sekr. TIB 3.1, Gustav-Meyer-Allee 25, D-13355 Berlin, Germany

 

SiC Based Pressure Sensor for
High-Temperature Environments


G. Wieczorek, B. Schellin, E. Obermeier
Microsensor and Actuator Technology (MAT), Technical University of Berlin, TIB 3.1
Gustav-Meyer-Allee 25, 13355 Berlin, Germany
gerd.wieczorek@mat.ee.tu-berlin.de
 
G. Fagnani, L. Drera
Gefran SpA, Via Sebina 74, 25050 Provaglio DIseo, Italy
giorgio.fagnani@gefran.com
 

 

IEEE Sensors Conference 2007, Proceedings, pp. 748-751


Abstract 
 

Aim of the work presented herein is to develop a SiC based pressure sensor enabling measurements up to 3000 bar at temperatures in the range of 25C to 400C. For fabrication of the sensor chip various processing techniques potentially permitting effective membrane structuring are compared. The sensor chip features a centerboss membrane with four piezoresistors made from epitaxial layers. To limit movement of the centerboss, a bottom plate wafer made from SiC is bonded to the sensor chip. The bottom plate is thus acting as an overpressure safety feature. A tungsten-based metallization scheme tested up to 500C is used. The housing of the sensor is fluid-free and employs a steel membrane for media separation.

 





For further information please contact: ngo@mat.ee.tu-berlin.de