Technical University Berlin, MAT, Sekr. TIB 3.1, Gustav-Meyer-Allee 25, D-13355 Berlin, Germany
SiC Based Pressure Sensor for
IEEE Sensors Conference 2007, Proceedings, pp. 748-751
Aim of the work presented herein is to develop a SiC based pressure sensor enabling measurements up to 3000 bar at temperatures in the range of 25°C to 400°C. For fabrication of the sensor chip various processing techniques potentially permitting effective membrane structuring are compared. The sensor chip features a centerboss membrane with four piezoresistors made from epitaxial layers. To limit movement of the centerboss, a bottom plate wafer made from SiC is bonded to the sensor chip. The bottom plate is thus acting as an overpressure safety feature. A tungsten-based metallization scheme tested up to 500°C is used. The housing of the sensor is fluid-free and employs a steel membrane for media separation.
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